Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements ... help to improve the efficiency and reliability of inverters for large industrial equipment operating ...

when compared to using Field Stop 7 IGBT technology. The device’s improved thermal performance, reduced power losses and ability to support fast switching speeds makes them suitable for three-phase ...

“The F5BP-PIMs are integrated with 1050V FS7 IGBT and the 1200V ... design for the inverter module and a flying capacitor topology for the boost module. They also have an optimized electrical ...