A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

Despite a long list of issues plaguing chip giant Intel (NASDAQ: INTC), the company has made meaningful progress catching up to TSMC in semiconductor manufacturing. Intel was stuck on its heavily ...

In FinFET designs, the pass gate and pull down transistors have the same number of fins, but nanosheets allow Intel to make the pull-down transistors wider than the pass-gate devices, leading to a ...

Intel began making finFET transistors in 2011 at the 22nm node. Foundries moved to finFETs later, at 16nm/14nm. FinFETs have several advantages over planar transistors. “As compared to prior planar ...

Intel is promising a 10-15 percent increase in performance-per-watt over 10nm SuperFin, thanks to new FinFET transistor optimizations. The second node is called Intel 4, which was previously ...

[der8auer] decided to extract a transistor from both Intel’s and AMD’s latest offerings to try and shed some light. Much of the confusion comes from the switch to the FinFET process.

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

According to Intel, SOI wafer adds approximately 10% to the total process cost. In comparison to SOI, FinFET has higher drive current. Moreover in FinFET, the strain technology can be used to increase ...

Intel said on Monday that the head of the company ... development and delivery of the company’s 22- and 14-nanometer FinFET technologies in his last role there. O’Buckley Is Third Exec ...

SAN JOSE, Calif.— July 12, 2023-- Cadence Design Systems, Inc. (Nasdaq: CDNS) today announced its digital and custom/analog flows are certified on the Intel 16 FinFET process technology and its design ...

One of the key technology trends driving semi-conductor industry is the adoption of finFET processes. As opposed to a traditional planar transistor, the finFET has an elevated channel or “fin,” which ...

Summary Intel and TSMC showcased their latest SRAM advancements at ISSCC, leveraging nanosheet transistors for greater density—boosting Intel’s by 23% and TSMC’s by 12%. Meanwhile, Synopsys achieved ...