Peking University transistor could outperform Intel, TSMC, and Samsung’s top silicon chips Full gate coverage boosts speed and cuts energy use in breakthrough Chinese transistor design China may ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

TSMC is expected to charge $45,000 for 1.4nm silicon wafers in 2028, up 50% from the $30K it charges for 2nm wafers.

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Marvell Technology's Q1 results are likely to reflect the benefits of strong traction in custom AI silicon and data center ...

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...

A team of scientists has unveiled a breakthrough that could one day propel computers to operate at speeds millions of times ...

Imagine computers that run not just faster—but a million times faster—than today’s best machines. Scientists at the ...

A group of researchers from the University of Arizona, The Jet Propulsion Laboratories of the California Institute of ...