A recent TechInsights analysis indicates that Yangtze Memory has developed advanced 3D NAND memory for consumer devices. The research firm characterizes the device's appearance in consumer ...

Advancements in 3D NAND have pushed chip designs beyond 200 layers, with companies like Micron, SK Hynix, and Samsung already eyeing 400-layer technology to increase storage density.

An artist's representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory.

Yangtze Memory Technologies Co. (YMTC) has quietly started to ship its 5th-Gen 3D NAND memory with 294 layers in total as well as 232 active layers, and analysts from TechInsights have managed to ...

Applied Surface Science (2023). [2] Redeposition Mechanism on Silicon Oxide Layers during Selective Etching Process in 3D NAND Manufacture. Journal of Industrial and Engineering Chemistry (2023).

Using Lam Cryo 3.0 technology, 3D NAND manufacturers can etch memory channels with depths of up to 10 microns with less than 0.1% deviation* in the feature's critical dimension from the top to the ...

Under-etching the W replacement gates in the recess can cause wordlines to short, while over-etching the W gates can damage cells or cause a short from the wordline to the source line. Presently, ...