Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

when compared to using Field Stop 7 IGBT technology. The device’s improved thermal performance, reduced power losses and ability to support fast switching speeds makes them suitable for three-phase ...

“The F5BP-PIMs are integrated with 1050V FS7 IGBT and the 1200V ... design for the inverter module and a flying capacitor topology for the boost module. They also have an optimized electrical ...