Although silicon carbide (SiC) and silicon nitride (Si₃N₄) ceramics belong to the same category of advanced structural ...

TSMC’s exit from GaN fabrication is paving the way for IDM model to take over with a tight design-manufacturing coupling.

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing ...

The University of California Santa Barbara has improved the integration of monolithic III-V lasers on silicon substrates.

In the push to shrink and enhance technologies that control light, MIT researchers have unveiled a new platform that pushes ...

New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

N thin films with record-high scandium levels, with exciting potential for ultra-low-power memory devices, as reported by researchers from Institute of Science Tokyo (Science Tokyo). Using reactive ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Imagine having a super-powered lens that uncovers hidden secrets of ultra-thin materials used in our gadgets. Research led by ...

While AI is grabbing headlines in today’s mainstream media for its transformative potential, it’s not a new technology. Its initial development dating back many decades, and includes the pioneering ...

The present paper deals with the crystal structure of? iron, the crystal shape of Cementite, and the structure of Austenite.