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TSMC’s exit from GaN fabrication is paving the way for IDM model to take over with a tight design-manufacturing coupling.
Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing ...
The University of California Santa Barbara has improved the integration of monolithic III-V lasers on silicon substrates.
Although silicon carbide (SiC) and silicon nitride (Si₃N₄) ceramics belong to the same category of advanced structural ceramics, they exhibit significant differences in performance and application ...
A tiny new crystal-based transistor could be the key to faster, more reliable AI chips—leaving traditional silicon designs in the dust. Credit: Shutterstock In a potential turning point for ...
While SiC offers benefits to designers and consumers, its manufacturing is substantially more expensive than silicon.
Greetings from the fourth dimension: Scientists glimpse 4D crystal structure using surface wave patterns by Technion - Israel Institute of Technology Editors' notes ...
DUBLIN-- (BUSINESS WIRE)--The "Silicon Nitride Market: Analysis By Type, By Grade, By End User, By Region Size and Trends and Forecast to 2030" report has been added to ResearchAndMarkets.com's ...
The Wrath at Khan Silicon Valley billionaires claim that antitrust enforcement hurts the little guy. Do they have a point?
Researchers at Nagoya University in Japan have developed a new crystal growth method for gallium nitride (GaN) semiconductors. Unlike conventional methods, the new method does not use ammonia, a ...
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