RIR Power Electronics announced the successful production expansion and shipment of 1200V SiC diodes from Taiwan. This milestone was achieved through a strategic collaboration with a contract fab at ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

Macworld While you’re trying to figure out if you’re going to invest in a new iPhone 17 this fall, we always like to remind ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Imagine computers that run not just faster—but a million times faster—than today’s best machines. Scientists at the ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Transistors are the unsung heroes behind every modern computer, smartphone, and digital devicebut how did these tiny pieces of silicon teach machines to “think”? In this video, we explore the ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

While SiC offers benefits to designers and consumers, its manufacturing is substantially more expensive than silicon.