Advancements in 3D NAND have pushed chip designs beyond 200 layers, with companies like Micron, SK Hynix, and Samsung already eyeing 400-layer technology to increase storage density.

Under-etching the W replacement gates in the recess can cause wordlines to short, while over-etching the W gates can damage cells or cause a short from the wordline to the source line. Presently, ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap ...

An artist's representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory.

Yangtze Memory Technologies Co. (YMTC) has quietly started to ship its 5th-Gen 3D NAND memory with 294 layers in total as well as 232 active layers, and analysts from TechInsights have managed to ...

A recent TechInsights analysis indicates that Yangtze Memory has developed advanced 3D NAND memory for consumer devices. The research firm characterizes the device's appearance in consumer ...

Using Lam Cryo 3.0 technology, 3D NAND manufacturers can etch memory channels with depths of up to 10 microns with less than 0.1% deviation* in the feature's critical dimension from the top to the ...

Applied Surface Science (2023). [2] Redeposition Mechanism on Silicon Oxide Layers during Selective Etching Process in 3D NAND Manufacture. Journal of Industrial and Engineering Chemistry (2023).

TechInsights is currently conducting a full analysis for more information on the new NAND. Toshiba had previously announced that they began mass production of their BiCS 3D NAND at their Fab 2 in ...