ASML is the sole producer of cutting-edge EUV lithography machines for advanced 3nm chip manufacturing. How secure is that ...

In EUV lithography, and especially high-numerical-aperture EUV, balancing tradeoffs between resolution, sensitivity and line-width roughness is becoming increasingly difficult. Lithography patterning ...

Huawei Technologies is strengthening its independence in personal computing, accelerating chip development to reduce reliance on US hardware and software. The company's latest PC processor, Kirin ...

Samsung Electronics reportedly deployed its first high-NA Extreme Ultraviolet (EUV) lithography machine at its Hwaseong Campus in early March. The move represents a key step in Samsung's push for ...

A new technical paper titled “A progressive wafer scale approach for Sub-10 nm nanogap structures” was published by researchers at Seoul National University, Chung-Ang University, Mohammed VI ...

Field effect transistors Gate-all-around, abbreviated as GAAFET, is the next stage in the evolution of transistor technology after MOSFET and FINFET. Latest innovations ... of access to technologies ...

The key advantage of Bi₂O₂Se is its high electron mobility—280 cm²/Vs at these scales—allowing for 40% faster operation while consuming 10% less power than cutting-edge FinFETs.

It is developed with TSMC 7nm ... IGMSHDY01A is a synchronous ULVT / LVT periphery high density single port SRAM compiler. It is developed with TSMC 5 nm 0.75 V/1.2 V CMOS LOGIC FinFET Compact Process ...

1-VIA’s VSCOM4l400ABG IP is a 1.8V low-noise unbuffered programmable 0.6 and 0.8V Bandgap Voltage References (BGR) with eight 50μA reference output currents implemented in TSMC12/16nm CMOS ... 1-VIA’s ...