Here is how a fascination with analog and mixed-signal semiconductors led Tony Pialis to design innovations in SerDes architectures.

Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...

Abstract: A new family of very low-voltage analog circuits is introduced. These circuits do not show the GB degradation that characterizes other low-voltage approaches based on floating-gate ...

Biological and Environmental Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia PSE, KAUST Solar Center (KSC), King ...

Scientists have built the world’s fastest transistor using laser pulses and graphene, paving the way for ultrafast computers in AI, space, and medicine.

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell ...

The team developed a two-dimensional transistor using bismuth oxyselenide. The team’s transistor has Gate-all-around technology, the latest field-effect transistor technology. It replaces FinFET.