A team of researchers at Peking University claims to have made a breakthrough in chip technology, potentially reshaping the ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

In FinFET designs, the pass gate and pull down transistors have the same number of fins, but nanosheets allow Intel to make the pull-down transistors wider than the pass-gate devices, leading to a ...

Intel began making finFET transistors in 2011 at the 22nm node. Foundries moved to finFETs later, at 16nm/14nm. FinFETs have several advantages over planar transistors. “As compared to prior planar ...

First, Intel 18A uses a new transistor design called RibbonFET, replacing the previous FinFET architecture that was introduced in 2011. The move to RibbonFET will improve performance per watt and ...

Intel is promising a 10-15 percent increase in performance-per-watt over 10nm SuperFin, thanks to new FinFET transistor optimizations. The second node is called Intel 4, which was previously ...

[der8auer] decided to extract a transistor from both Intel’s and AMD’s latest offerings to try and shed some light. Much of the confusion comes from the switch to the FinFET process.

The 16nm FinFET node has introduced several new challenges in the IC design community. In addition to the complexity of power-noise and electromigration (EM) verification, thermal reliability has ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

According to Intel, SOI wafer adds approximately 10% to the total process cost. In comparison to SOI, FinFET has higher drive current. Moreover in FinFET, the strain technology can be used to increase ...

Intel said on Monday that the head of the company ... development and delivery of the company’s 22- and 14-nanometer FinFET technologies in his last role there. O’Buckley Is Third Exec ...