TSMC’s exit from GaN fabrication is paving the way for IDM model to take over with a tight design-manufacturing coupling.

In the push to shrink and enhance technologies that control light, MIT researchers have unveiled a new platform that pushes ...

In the push to shrink and enhance technologies that control light, MIT researchers have unveiled a new platform that pushes ...

New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Solid oxide electrolysis cells (SOECs) are a leading technology for carbon dioxide reduction and energy conversion, offering ...