Although silicon carbide (SiC) and silicon nitride (Si₃N₄) ceramics belong to the same category of advanced structural ceramics, they exhibit significant differences in performance and application ...

TSMC’s exit from GaN fabrication is paving the way for IDM model to take over with a tight design-manufacturing coupling.

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing ...

The University of California Santa Barbara has improved the integration of monolithic III-V lasers on silicon substrates.

In the push to shrink and enhance technologies that control light, MIT researchers have unveiled a new platform that pushes ...

In the push to shrink and enhance technologies that control light, MIT researchers have unveiled a new platform that pushes ...

New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Solid oxide electrolysis cells (SOECs) are a leading technology for carbon dioxide reduction and energy conversion, offering ...

The present paper deals with the crystal structure of? iron, the crystal shape of Cementite, and the structure of Austenite.