TSMC’s exit from GaN fabrication is paving the way for IDM model to take over with a tight design-manufacturing coupling.

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing ...

The University of California Santa Barbara has improved the integration of monolithic III-V lasers on silicon substrates.

Although silicon carbide (SiC) and silicon nitride (Si₃N₄) ceramics belong to the same category of advanced structural ceramics, they exhibit significant differences in performance and application ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a promising material for next-generation electronics, including power ...

Results and Discussion To investigate localized laser-induced damage of a suspended membrane and to demonstrate its utility in defining the location of nanopore formation by CBD, we used 50 nm thick ...

The Wrath at Khan Silicon Valley billionaires claim that antitrust enforcement hurts the little guy. Do they have a point?

Researchers at Nagoya University in Japan have developed a new crystal growth method for gallium nitride (GaN) semiconductors. Unlike conventional methods, the new method does not use ammonia, a ...

Polycrystals are aggregates of single crystal grains. As they coalesce, the are randomly oriented, unlike the crystals themselves which maintain their highly ordered structure.