Under the collaboration, Soitec will supply PSMC 300mm substrates incorporating a release layer, Transistor Layer Transfer ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

TSMC is expected to charge $45,000 for 1.4nm silicon wafers in 2028, up 50% from the $30K it charges for 2nm wafers.

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Imagine computers that run not just faster—but a million times faster—than today’s best machines. Scientists at the ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Transistors are the unsung heroes behind every modern computer, smartphone, and digital devicebut how did these tiny pieces of silicon teach machines to “think”? In this video, we explore the ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

Scientists uncovered rare hexagonal silicon forms (2H, 4H, 6H) created by stress and heat, challenging assumptions about this ...

While SiC offers benefits to designers and consumers, its manufacturing is substantially more expensive than silicon.

Shengxi Huang explains why Picoquant’s instruments are helping her to develop 2D materials that are highly efficient sources ...

Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology ...